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| Datasheet File OCR Text: |
| NTE368 Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic: Output Power = 60 Watts Minimum Gain = 4.4dB Efficiency = 55% D Characterized with Series Equivalent Large-Signal Impedance Parameters D Built-In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16-volt High Line and Overdrive Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current-Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO V(BR)CES Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO ICES IC = 50mA, IB = 0 IC = 50mA, VBE = 0 IE = 5mA, IC = 0 VCE = 15V, VBE = 0, TC = +25C 16 36 4 - - - - - - - - 15 V V V mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common-Emitter Amplifier Power Gain Input Power Collector Efficiency Output Mismatch Stress GPE Pin VCC = 16V, Pin = 26W, f = 470MHz, VSWR = 20:1, All Phase Angles POUT = 60W, VCC = 12.5V, f = 470MHz 4.4 - 55 5.0 19 60 - 22 - dB W % Cob VCB = 12.5V, IE = 0, f = 1MHz - 130 150 pF hFE VCE = 5V, IC = 6A 20 70 150 Symbol Test Conditions Min Typ Max Unit No Degradation in Output Power Note 1. y = Mismatch stress factor - the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture terminated in a 20:1 minimum load mismatch at all phase angles. .205 (5.18) E .405 (10.3) Min B .215 (5.48) .122 (3.1) Dia C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78) |
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